AO4438
N Channel Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D =250 μ A, V GS =0V
60
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
V DS =60V, V GS =0V
V DS =0V, V GS = ±20V
T J =55°C
1
5
100
μ A
nA
V GS(th)
R DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V DS =V GS I D =250 μ A
V GS =10V, I D =8.2A
T J =125°C
2
2.3
16.3
30
3
22
40
V
m ?
V GS =4.5V, I D =7.6A
20
27
m ?
g FS
Forward Transconductance
V DS =5V, I D =8.2A
24
S
V SD
Diode Forward Voltage
I S =1A,V GS =0V
0.74
1
V
I S
Maximum Body-Diode Continuous Current
3
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
1920
2300
pF
C oss
C rss
Output Capacitance
Reverse Transfer Capacitance
V GS =0V, V DS =30V, f=1MHz
155
116
pF
pF
R g
Gate resistance
V GS =0V, V DS =0V, f=1MHz
0.65
0.8
?
SWITCHING PARAMETERS
Q g (10V)
Total Gate Charge
47.6
58
nC
Q g (4.5V) Total Gate Charge
Q gs Gate Source Charge
Q gd
Gate Drain Charge
t D(on)
Turn-On DelayTime
V GS =10V, V DS =30V, I D =8.2A
24.2
6
14.4
8.2
30
nC
nC
nC
ns
t r
t D(off)
t f
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V GS =10V, V DS =30V, R L =3.6 ? ,
R GEN =3 ?
5.5
29.7
5.2
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =8.2A, dI/dt=100A/ μ s
34
41
ns
Q rr
Body Diode Reverse Recovery Charge I F =8.2A, dI/dt=100A/ μ s
53
nC
A: The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θ JA is the sum of the thermal impedence from junction to lead R θ JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Rev.5. 0: August 2013
www.aosmd.com
Page 2 of 4
相关PDF资料
AO4447A MOSFET P-CH 30V 17A 8-SOIC
AO4496 MOSFET N CH 30V 10A SOIC 8
AO5803E MOSFET 2P-CH 20V 0.6A SC89-6L
AO6808 MOSFET 2N-CH 20V 4.6A 6TSOP
AO7410 MOSFET N-CH 30V 1.7A SC70
AOB1606L MOS N CH 60V 178A TO263
AOB411L MOSFET P-CH 60V 8A TO263
AOD458 MOSFET N CH 250V 14A TO252
相关代理商/技术参数
AO4438_10 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:60V N-Channel MOSFET
AO4438_101 功能描述:MOSFET N-CHANNEL 60V 8.2A 8SO 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷(TR) 零件状态:停產 FET 类型:N 沟道 技术:MOSFET(金属氧化物) 漏源电压(Vdss):60V 电流 - 连续漏极(Id)(25°C 时):8.2A(Ta) 驱动电压(最大 Rds On,最小 Rds On):4.5V,10V 不同 Id 时的 Vgs(th)(最大值):3V @ 250μA 不同 Vgs 时的栅极电荷?(Qg)(最大值):30nC @ 4.5V Vgs(最大值):±20V 不同 Vds 时的输入电容(Ciss)(最大值):2300pF @ 30V FET 功能:- 功率耗散(最大值):3.1W(Ta) 不同?Id,Vgs 时的?Rds On(最大值):22 毫欧 @ 8.2A,10V 工作温度:-55°C ~ 150°C(TJ) 安装类型:表面贴装 供应商器件封装:8-SO 封装/外壳:8-SOIC(0.154",3.90mm 宽) 标准包装:3,000
AO4438L 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
AO4440 功能描述:MOSFET N-CH 60V 5A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
AO4440_10 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:60V N-Channel MOSFET
AO4440L 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
AO4441 功能描述:MOSFET P-CH 60V 4A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
AO4441L 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor